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RTP Electro-optic Q-Switch > RTP Electro-optic Q-Switch

Introduction

Regular flux grown RTP has an electric resistivity as low as 108 cm which may exhibit the detrimental electrochromism when subjected to a dc electric field. RTP crystals with high electrical resistivity (~1011-1012•cm) have been grown successfully using our own proprietary technology. The electrochromism is not observed under a continuous 1000V/mm Z-directed electric field over more than 1000 hours. This RTP crystal has high damage threshold large effective electro-optic coefficients and lower half-wave voltage. The Q-switch is built utilizing thermally compensated double-crystal designs.

 
 

Standard Specifications

 
 

Items

Specifications

Spectral range

350nm~4500nm

Half Wave Voltage at 1064 nm

5x5x10 mm: ~2,000 V

8x8x10 mm: ~3,200 V

9x9x20 mm: ~1,800 V

Contrast ratio

>100£º1

Aperture

from 2x2 mm² up to 15x15 mm²

Damage threshold

> 750MW/cm2 (@ 1064nm, 10ns, 10Hz)

AR coating

R < 0.2% @ 1064 nm

 

 
   
 
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