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RTP Electro-optic Q-Switch
> RTP Electro-optic Q-Switch |
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Introduction |
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Regular flux grown RTP has an electric resistivity as low as 108 cm which may exhibit the detrimental electrochromism when subjected to a dc electric field. RTP crystals with high electrical resistivity (~1011-1012•cm) have been grown successfully using our own proprietary technology. The electrochromism is not observed under a continuous 1000V/mm Z-directed electric field over more than 1000 hours. This RTP crystal has high damage threshold large effective electro-optic coefficients and lower half-wave voltage. The Q-switch is built utilizing thermally compensated double-crystal designs. |
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Standard
Specifications |
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Items |
Specifications |
Spectral range |
350nm~4500nm |
Half Wave Voltage at 1064 nm |
5x5x10 mm: ~2,000 V
8x8x10 mm: ~3,200 V
9x9x20 mm: ~1,800 V |
Contrast ratio |
>100£º1 |
Aperture |
from 2x2 mm² up to 15x15 mm² |
Damage threshold |
> 750MW/cm2 (@ 1064nm, 10ns, 10Hz) |
AR coating |
R < 0.2% @ 1064 nm |
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Catalogue Download |
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