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Nd:YVO4 > Nd:YVO4

Introduction

Nd:YVO4 is the most efficient laser host crystal for diode pumping among the current commercial laser crystals especially for low to middle power density. This is mainly for its absorption and emission features surpassing Nd:YAG. Pumped by laser diodes Nd: YVO4 crystal has been incorporated with high NLO coefficient crystals ( LBO BBO or KTP) to frequency-shift the output from the near infrared to green blue or even UV. This incorporation to construct all solid state lasers is an ideal laser tool that can cover the most widespread applications of lasers including machining material processing spectroscopy wafer inspection light displays medical diagnostics laser printing and data storage etc. It has been shown that Nd:YVO4 based diode pumped solid state lasers are rapidly occupying the markets traditionally dominated by water-cooled ion lasers and lamp-pumped lasers especially when compact design and single-longitudinal-mode outputs are required.

 
 

Standard Specifications

 

Laser Properties of Nd:YVO4

1.  One most attractive character of Nd:YVO4 is, compared with Nd:YAG,

 its 5 times larger absorption coefficient in a broader absorption bandwidth

 around the 808 nm peak pump wavelength, which just matches the standard

of high power laser diodes currently available. This means a smaller crystal

that could be used for the laser, leading to a more compact laser system.

 For a given output power, this also means a lower power level at which

 the laser diode operates, thus extending the lifetime of the expensive

laser diode.

The broader absorption bandwidth of Nd:YVO4 which may reaches 2.4 to 6.3

times that of Nd:YAG. Besides more efficient pumping, it also means a broader

 range of selection of diode specifications. This will be helpful to laser system

makers for wider tolerance for lower cost choice.

2.  Nd:YVO4 crystal has larger stimulated emission cross-sections, both at

1064nm and 1342nm. When a-axis cut Nd:YVO4 crystal lasing at 1064m,

it is about 4 times higher than that of Nd:YAG, while at 1340nm the stimulated

cross-section is 18 times larger, which leads to a CW operation completely

outperforming Nd:YAG at 1320nm. These make Nd:YVO4 laser be easy to maintain

a strong single line emission at the two wavelengths.

3.  Another important character of Nd:YVO4 lasers is, because it is an uniaxial

rather than a high symmetry of cubic as Nd:YAG, it only emits a linearly polarized

laser, thus avoiding undesired birefringent effects on the frequency conversion.

 Although the lifetime of Nd:YVO4 is about 2.7 times shorter than that of Nd:YAG,

 its slope efficiency can be still quite high for a proper design of laser cavity,  because

of its high pump quantum efficiency.

The major laser properties of  Nd:YVO4 vs Nd:YAG are listed in Table below, 

 including stimulated emission cross-sections (σ),Absorption Coefficient (α) 

 Fluorescent lifetime (τ), Absorption Length  (La), threshold Power (Pth)

and Pump Quantum Efficiency (η).

                                               Laser Properties of Nd:YVO4 vs Nd:YAG

  

LASER CRYSTAL

DOPING

(atm%)

σ

(x10-19 CM2)

α

(cm-1)

τ

(μs)

La

(mm)

PTH

(mw)

ηs

(%)

Nd:YVO4(a-cut)

1.0

2.0

25

25

31.2

72.4

90

50

0.32

0.14

30

78

52

48.6

Nd:YVO4(c-cut)

1.1

7

9.2

90

 

231

45.5

Nd:YAG

0.85

6

7.1

230

1.41

115

38.6

 

 Typical Results

Diode pumped Nd:YVO4 laser output comparing with diode pumped Nd:YAG laser.

Crystals

Size (mm3)

Pump Power

Output (at 1064nm)

Nd:YVO4

3x3x1

850mW

350mW

Nd:YVO4

3x3x5

15W

6W

Nd:YAG

3x3x2

850mW

34mW

Diode pumped Nd:YVO4+KTP green laser.

8W green laser was generated from a 15W LD pumped 0.5%Nd:YVO4 with  intracavity KTP. 

200mW green outputs are generated from 1 W  LD pumped 2%Nd:YVO4 lasers by using Banner Union’s

2x2x5mm KTP and 3x3x1mm Nd:YVO4.

2-5mw green outputs are generated from 180mw LD pumped 3%Nd:YVO4 and KTP glued crystals.

 For more details, please refer to Glued Crystals.   

Coating Service

Both ends AR/AR-1064/808nm, R<0.2%@1064nm,R<2%@808nm

S1:HR@1064&532 nm,HT808 nm,

R>99.8%@1064&532nm,T>90%@808nm

S2:AR@1064&532 nm, R<0.2%@1064nm,R<0.5%@532nm

S1:HR@1064,HT808, R>99.8%@1064nm,T>95%@808nm

S2:AR@1064, R<0.1%@1064nm.

S1,S2 AR-coated, S3:gold/chrome plated.

Both ends AR/AR-1064 nm; S3:AR-808 nm

Other coatings are available upon request.

 
   
 

Items

Specifications

Dimension Tolerance

(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L2.5mm)

(W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm) (L<2.5mm)

Clear aperture

central 90% of the diameter

Flatness

l/8 @ 632.8nm (L2.5mm)

l/4 @ 632.8nm (L<2.5mm)

wavefront distortion

l/4 @ 632.8nm

Bevel

0.2mm@45°

Chip

0.1mm

Surface Quality

scratch and dig 10-5

Parallelism

20 arc seconds

Perpendicularity

5 arc minutes

Angle tolerance

0.5°

Damage threshold[GW/cm ]:

>1 for 1064nm, TEM00, 10ns, 10Hz (AR-coated)

 

 
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Nd:YVO4
Nd:YVO4
 

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